・!DOCTYPE html PUBLIC "-//W3C//DTD XHTML 1.0 Transitional//EN" "http://www.w3.org/TR/xhtml1/DTD/xhtml1-transitional.dtd">" Tsukazaki lab.| Introduction

How to access

Tsukazaki Laboratory

address
Institute for Materials Research,
Tohoku University
2-1-1 Katahira, Aoba-ku, Sendai
980-8577, Japan
Office :Bldg. 4 - 211
Lab.:Bldg. 4 - 208, 209, 210
Phone
022-215-2085 (Tsukazaki)
Phone
022-215-2088 (Lab.)
Fax
022-215-2086
E-mail
tsukazaki_@_imr.tohoku.ac.jp
(Please remove "_".)

Brief introduction

Focusing
Exploring novel low temperature physics on solid-state interface and new materials using thin film growth tequniques
Facilities
Molecular beam epitaxy, Pulsed laser deposition
Meeting
JSAP, MRS, APS and etc.
More about research
The research subject in this division is a further development of functionalities at the solid interfaces. In particular, we aim to discover a novel function at the well-regulated and abrupt interfaces prepared by our thin film growth techniques. Combining the growth technique and electrostatic doping method enable us to make highly mobile and quantum transport channels at the solid interfaces. Now, we try to expand these techniques to develop the potential for various materials and interfaces for future advancement in condensed matter physics.
 

Molecular beam epitaxy

img_02